Organic el light emitting device, manufacturing method therefor, and organic el illumination device

ABSTRACT

An organic EL light emitting device includes a transparent substrate, a transparent electrode film formed on the substrate, a positive electrode contact portion in contact with a part of the transparent electrode film and electrically connected therewith, an insulating layer formed on the transparent electrode film such that the an insulating layer covers a portion excluding a light emitting part, an organic light emitting layer formed on the transparent electrode film and on the insulating layer, a negative electrode film formed on the organic light emitting layer, a negative electrode contact portion in contact with at least a part of the negative electrode film and electrically connected therewith, and a protective layer for separating and electrically insulating the positive electrode contact portion and the transparent electrode film from the negative electrode contact portion.

TECHNICAL FIELD

The present invention relates to an organic EL light emitting device, amethod for manufacturing an organic EL light emitting device and anorganic EL illumination device.

BACKGROUND ART

An illumination device having a light emitting device using organicelectroluminescence (hereinafter, referred to as “organic EL”) isincreasingly used. For example, the device is put to practical use for acell-phone display. Compared with conventional illumination devices suchas a fluorescent lamp, the illumination device using organic EL hasadvantages that it has energy-saving property, that it has low heatgenerating property, that it is thin and lightweight, and that it isenvironmentally friendly. Since the illumination device using organic ELis a surface light source, a wide range illumination is capable of beingattained, or the device becomes flexible when a plastic substrate isused, and therefore the device is capable of being applied to anillumination device which is excellent in design. For this reason,organic EL is being expected as not only illumination device forhousing, offices, or vehicles, but also for decorative illumination, orPOP illumination.

As an organic EL light emitting device, for example, in PatentLiterature 3, planar light emitting device in which luminance unevennessis capable of being reduced, and the area of non-light emitting portionis capable of being reduced is described. In this technique, thedistance between predetermined two parallel sides of four sides of arectangle light emitting portion constituted by a region where only anorganic layer is interposed between an planar anode and a planar cathodeand the outer circumferential edges of a transparent substrate issmaller than the distance between other two parallel sides of the foursides and the transparent substrate, a cathode power supplying portionand an anode power supplying portion are arranged along the other twoparallel sides of the light emitting portion, and anode power supplyingportions are arranged on both sides of the cathode power supplyingportion in the width direction.

Patent Literature 1 describes an organic EL element in which takeoffterminals of an anode and a cathode are arranged on a short side of atransparent substrate and which has a light emitting region the width ofelectrode wiring pattern is narrow. Further, Patent Literature 2describes an organic EL element in which a cathode has a smallerelectric resistance than that of an anode, and in which by making thearea of the surface of an anode terminal which is connected to theoutside larger than that of the surface of a cathode terminal which isconnected to the outside, thereby reducing luminance unevenness.

CITATION LIST Patent Literature

Patent Literature 1: Unexamined Japanese Patent Application KokaiPublication No. 2001-244069

Patent Literature 2: Unexamined Japanese Patent Application KokaiPublication No. 2009-259413

Patent Literature 3: Unexamined Japanese Patent Application KokaiPublication No. 2010-198980

SUMMARY OF INVENTION Technical Problem

In a general process for manufacturing an organic EL light emittingelement of related art, a transparent conductive electrode film made of,for example, ITO (Indium Tin Oxide; indium tin oxide), an electrode, aninterlayer insulating film, and a photosensitive organic insulator aresuccessively formed on a substrate. However, the surface of ITO or theedge of ITO is roughened by etching treatment during the process, orshort circuiting occurs during the use thereof, which has been causes ofa failure. There also have been a problem of very high cost due to acomplex process.

In the organic EL light emitting device, a voltage is applied from apositive electrode and a negative electrode to inject carriers to emitlight. In cases where an organic EL light emitting device is used for anillumination device having a panel shape, since each side of the panelis generally used for an electrode portion in order to stably apply avoltage on the device, an electrode takeoff portion is required to beformed on each side, and the portion has been a non-light emittingportion. As the result, when an organic EL light emitting device isutilized for an illumination device, decrease in the total luminous fluxor decrease in illuminance is caused due to a panel having a so-calledlarge frame and having a low aperture ratio, and thus the illuminationdevice has a disadvantage compared with other light sources. Other thanthe case in which an organic EL light emitting device is used forillumination, this holds true also for cases where an organic EL lightemitting device is used for a backlight for such as a bulletin board oran advertising display, or cases where an organic EL light emittingdevice is used for an illumination device having a curved surface shape.

The present invention has been made in view of the above, and anobjective of the present invention is to provide an organic EL lightemitting device which is manufactured in a simple process and whoseaperture ratio is capable of being increased, a manufacturing method ofthe organic EL light emitting device, and an organic EL illuminationdevice.

Solution to Problem

An organic EL light emitting device relating to a first aspect of thepresent invention comprises

-   -   a transparent substrate,    -   a transparent electrode film formed on the substrate,    -   a positive electrode contact portion which is electrically        connected to the transparent electrode film as a part of the        transparent electrode film,    -   an insulating layer formed on the transparent electrode film        such that a light emitting portion is opened,    -   an organic light emitting layer formed on the transparent        electrode film and on the insulating layer,    -   a negative electrode layer formed on the organic light emitting        layer,    -   a negative electrode contact portion which is in contact with at        least part of the negative electrode layer and which is        electrically connected to the negative electrode layer, and    -   a protective layer which, in order to separate and electrically        insulate the transparent electrode film and the positive        electrode contact portion from the negative electrode contact        portion, is formed therebetween, wherein    -   the positive electrode contact portion and the negative        electrode contact portion are electrically insulated by the        insulating layer or the protective layer; and    -   the transparent electrode film is formed without a gap across an        area on the substrate including areas where the positive        electrode contact portion, the insulating layer, the organic        light emitting layer, the negative electrode layer, the negative        electrode contact portion and the protective layer are formed.

A manufacturing method of an organic EL light emitting device relatingto a second aspect of the present invention comprises

-   -   forming a transparent electrode film on a transparent substrate,    -   forming a positive electrode contact portion which is        electrically connected to the transparent electrode film as a        part of the transparent electrode film,    -   forming a negative electrode contact portion on a part of upper        side of the transparent electrode film such that the negative        electrode contact portion is separated from the transparent        electrode film and the positive electrode contact portion,    -   forming an insulating layer on the transparent electrode film        such that a light emitting portion is opened,    -   forming an organic light emitting layer on the transparent        electrode film and on the insulating layer, and    -   forming a negative electrode layer which is electrically        connected to the negative electrode contact portion on the        organic light emitting layer such that the negative electrode        layer is separated from the transparent electrode film and the        positive electrode contact portion, and further comprises    -   before the forming a negative electrode contact portion,    -   forming a protective layer for electrically insulating the        transparent electrode film and the positive electrode contact        portion from the negative electrode contact portion between the        transparent electrode film and the positive electrode contact        portion, and the negative electrode contact portion.

An organic EL illumination device relating to a third aspect of thepresent invention is characterized by comprising

-   -   the organic EL light emitting device relating to the first        aspect of the present invention.

An organic EL illumination device relating to a fourth aspect of thepresent invention is characterized by comprising

-   -   an organic EL light emitting device manufactured by the        manufacturing method of an organic EL light emitting device        relating to the second aspect of the present invention.

Advantageous Effects of Invention

By the present invention, the process becomes simple and the apertureratio is capable of being increased.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 1 of the present invention;

FIG. 1B is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 1 of the present invention;

FIG. 1C is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 1 of the present invention;

FIG. 1D is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 1 of the present invention;

FIG. 1E is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 1 of the present invention;

FIG. 1F is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 1 of the present invention;

FIG. 2 is a configuration cross section of an organic EL light emittingdevice relating to Embodiment 1, illustrating a cross section takenalong line X1-X1 in FIG. 1F;

FIG. 3A is a configuration cross section of an organic EL light emittingdevice relating to Embodiment 1, illustrating a cross section takenalong line Y1-Y1 in FIG. 1F;

FIG. 3B is a configuration cross section illustrating a modification ofthe organic EL light emitting device illustrated in FIG. 3A;

FIG. 4A is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 2 of the present invention;

FIG. 4B is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 2 of the present invention;

FIG. 4C is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 2 of the present invention;

FIG. 4D is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 2 of the present invention;

FIG. 4E is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 2 of the present invention;

FIG. 4F is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 2 of the present invention;

FIG. 5A is a configuration cross section of an organic EL light emittingdevice relating to Embodiment 2, illustrating a cross section takenalong line Y2-Y2 in FIG. 4F;

FIG. 5B is a configuration cross section of an organic EL light emittingdevice relating to Embodiment 2, illustrating a cross section takenalong line Y2-Y2 in FIG. 4F;

FIG. 5C is a configuration cross section of an organic EL light emittingdevice relating to Embodiment 2, illustrating a cross section takenalong line X2-X2 in FIG. 4F.

FIG. 6 is a configuration cross section illustrating anotherconfiguration of an organic EL light emitting device relating toEmbodiment 2;

FIG. 7A is a configuration cross section of another configuration of anorganic EL light emitting device relating to Embodiment 2, illustratinga cross section taken along line Y3-Y3 in FIG. 6;

FIG. 7B is a configuration cross section of another configuration of anorganic EL light emitting device relating to Embodiment 2, illustratinga cross section taken along line Y3-Y3 in FIG. 6;

FIG. 8A is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 3 of the present invention;

FIG. 8B is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 3 of the present invention;

FIG. 8C is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 3 of the present invention;

FIG. 8D is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 3 of the present invention;

FIG. 8E is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 3 of the present invention;

FIG. 8F is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 3 of the present invention;

FIG. 9A is a configuration cross section of an organic EL light emittingdevice relating to Embodiment 3, illustrating a cross section takenalong line X4-X4 in FIG. 8F;

FIG. 9B is a configuration cross section of an organic EL light emittingdevice relating to Embodiment 3, illustrating a cross section takenalong line X4-X4 in FIG. 8F;

FIG. 10 is a configuration cross section of an organic EL light emittingdevice relating to Embodiment 3, illustrating a cross section takenalong line Y4-Y4 in FIG. 8F;

FIG. 11A is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 3 of the present invention;

FIG. 11B is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 3 of the present invention;

FIG. 11C is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 3 of the present invention;

FIG. 11D is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 3 of the present invention;

FIG. 11E is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 3 of the present invention;

FIG. 11F is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 3 of the present invention;

FIG. 12 is a configuration cross section of an organic EL light emittingdevice relating to a modification of Embodiment 3, illustrating a crosssection taken along line Y5-Y5 in FIG. 11F;

FIG. 13A is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 4 of the present invention;

FIG. 13B is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 4 of the present invention;

FIG. 13C is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 4 of the present invention;

FIG. 13D is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 4 of the present invention;

FIG. 13E is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 4 of the present invention;

FIG. 13F is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 4 of the present invention;

FIG. 13G is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 4 of the present invention;

FIG. 14A is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 4 of the present invention;

FIG. 14B is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 4 of the present invention;

FIG. 14C is a configuration plan view illustrating one example of amanufacturing process of an organic EL light emitting device relating toa modification of Embodiment 4 of the present invention;

FIG. 15A is one example of the shape of an organic EL light emittingdevice relating to Embodiment 4; and

FIG. 15B is one example of the shape of an organic EL light emittingdevice relating to Embodiment 4.

DESCRIPTION OF EMBODIMENTS

In the following, organic EL light emitting devices, manufacturingmethods of an organic EL light emitting device and organic ELillumination devices relating to Embodiments of the present inventionwill be described in detail with reference to the Drawings. A likenumeral designates a like or corresponding part in figures.

Embodiment 1

FIGS. 1A-1F are configuration plan views illustrating one example ofmanufacturing processes of an organic EL light emitting device relatingto Embodiment 1 of the present invention. FIG. 2 is a configurationcross section of an organic EL light emitting device relating toEmbodiment 1, illustrating a cross section taken along line X1-X1 inFIG. 1F. FIG. 3A is a configuration cross section of an organic EL lightemitting device relating to Embodiment 1, illustrating a cross sectiontaken along line Y1-Y1 in FIG. 1F. FIG. 3B illustrates a modification ofFIG. 3A.

The light emitting principle of an organic EL is such that, by applyinga voltage to a cathode and an anode, electrons and holes injected fromthe cathode and the anode respectively are recombined at a lightemitting layer to form excitons to generate an excited state, and whenthe excited state returns to a low energy level (for example, a groundstate), a light is emitted. Here, an excited state having the sameelectron spin multiplicity as that of a ground state is a singletexcited state; an excited state having different electron spinmultiplicity from that of a ground state is a triplet excited state. Alight emission is obtained when the excited state returns to a lowlevel, or to a ground state. A fluorescence is obtained when a singletexcited state returns thereto; a phosphorescence is obtained whentriplet excited state returns thereto. In cases where the light emittinglayer is a binary system of a host and a dopant, by the energy shiftfrom an excited state generated in a host molecule to a dopant molecule,the dopant molecule emits light.

An organic EL light emitting device 100 comprises a substrate 1, atransparent electrode film (positive electrode film) 2, a protectivelayer 3, a positive electrode contact and a power supplying portion 4(hereinafter, referred to as “positive electrode contact portion 4”), anegative electrode contact and power supplying portion 5 (hereinafter,referred to as “negative electrode contact portion 5”), an auxiliaryelectrode 6, an insulating layer 7, an organic light emitting layer 8,and a negative electrode film 9.

In the present Embodiment, the organic EL light emitting device 100 isused for an organic EL illumination device (illumination device) such asa room lamp. The organic EL light emitting device 100 is not limited foran illumination device, and is usable for a variety of applications suchas information display panel for a bulletin board, advertising or thelike, a backlight for a display for an image or a liquid crystaldisplay, a display device for home appliances or the like.

The positive electrode contact and power supplying portion 4 serves asthe positive electrode contact portion 4 and a power supplying portionwhich supplies power to the organic light emitting layer 8 via thepositive electrode contact portion 4. Similarly, the negative electrodecontact and power supplying portion 5 serves as a negative electrodecontact portion 5 and a power supplying portion which supplies power tothe organic light emitting layer 8 via negative electrode contactportion 5.

The substrate 1 is formed from a material such as a non-alkali glass. Amaterial such as PEN (polyethylene naphthalate), which is a resinsubstrate having flexibility, is also usable.

The transparent electrode film 2 is formed of, for example, indium tinoxide (ITO), and formed on substantially the whole surface of thesubstrate 1 by sputtering in a state in which there is no gap. The term“substantially the whole surface of the substrate 1” refers to a wholearea including areas where the protective layer 3, the positiveelectrode contact portion 4, the negative electrode contact portion 5,the auxiliary electrode 6, the insulating layer 7, the organic lightemitting layer 8, and negative electrode film 9 are formed. In otherwords, the transparent electrode film 2 is formed on the whole regionincluding, in a planar view, at least a region (area) where theprotective layer 3, the positive electrode contact portion 4, thenegative electrode contact portion 5, the auxiliary electrode 6, theinsulating layer 7, the organic light emitting layer 8, and the negativeelectrode film 9 are formed on the substrate 1. It is possible that thetransparent electrode film 2 be formed covering the whole surface to theends of the substrate 1 without a gap or be formed without covering tothe ends of the substrate 1. On a lower side of at least the protectivelayer 3, the positive electrode contact portion 4, the negativeelectrode contact portion 5, the auxiliary electrode 6, the insulatinglayer 7, the organic light emitting layer 8, and the negative electrodefilm 9, the transparent electrode film 2 is formed. It is possible thatthe transparent electrode film 2 is formed by other physical vapordepositions (PVD: Physical Vapor Deposition) such as a vacuum vapordeposition. In the present Embodiment, a usable film thickness of thetransparent electrode film 2 is, for example, 100 to 300 nm.

The protective layer 3 is formed on the transparent electrode film 2 orthe like, and is used for forming a base for lift-up while insulatingbetween the layers each other. The protective layer 3 also functions asa planarizing film for the underlayer of the protective layer 3. For theprotective layer 3, an inorganic material film such as a photoresistmaterial having photosensitivity such as novolac, acrylic, or polyimidematerial, a silicon nitride film (SiNx) film or a silicon oxide (SiOx)film. It is possible to form the protective layer 3 by, after theapplication, being subjected to patterning by photolithography, or usingvacuum vapor deposition or chemical vapor deposition (CVD: ChemicalVapor Deposition) and patterning by shadow mask or photoetching.

Specifically, the protective layer 3 is formed by forming thetransparent electrode film 2 on the substrate 1 and forming the negativeelectrode contact portion 5 on the protective layer 3. At this time,since the height of the positive electrode contact portion 4 and theheight of the negative electrode contact portion 5 when they are formedare different, the portions are easily arranged while keeping theelectrical insulation therebetween. The term “height when formed” refersto the position of the layer of each of the positive electrode contactportion 4 and the negative electrode contact portion 5 from thesubstrate 1. The phrase “the height of the positive electrode contactportion 4 and the height of the negative electrode contact portion 5when they are formed are different” is hereinafter referred to as “thepositive electrode contact portion 4 and the negative electrode contactportion 5 are formed in different layers”. The phrase also includes “thepositive electrode contact portion 4 and the negative electrode contactportion 5 are formed in a different process step (order).

By forming the protective layer 3 such that the width thereof is widerthan that of the negative electrode contact portion 5, it is possible toeasily and surely separate the positive electrode contact portion 4 fromthe negative electrode contact portion 5. As illustrated in FIG. 1B, theprotective layer 3 is formed on the both end portions of the transparentelectrode film 2 at opposing positions such that the layer rims theorganic EL light emitting device 100. In the present Embodiment, sincethe substrate 1 is rectangle, the protective layer 3 is formed along theopposing sides on the right and left. On the end portion of thetransparent electrode film 2 on which side the protective layer 3 isformed, the negative electrode contact portion 5 is formed. In thepresent Embodiment, the negative electrode contact portion 5 is formedsuch that a gap is formed on the protective layer 3 at a center portionof the transparent electrode film 2. As illustrated in FIG. 1C and FIG.2, the negative electrode contact portion 5 is formed such that thewidth thereof is narrower than that of the protective layer 3, and suchthat the portion recedes a predetermined distance more from the centerof the transparent electrode film 2 compared with the protective layer3. By forming the negative electrode contact portion 5 having a narrowerwidth than that of the protective layer 3 on the protective layer 3, itis possible to easily separate the positive electrode contact portion 4from the negative electrode contact portion 5 even when the portion isnot formed with high precision. In the present Embodiment, when a resistmaterial is used for the protective layer 3, a usable film thicknessthereof is, for example, 500 to 1500 nm.

The positive electrode contact portion 4 is electrically connected tothe transparent electrode film 2, and injects the holes supplied to theorganic EL light emitting device 100 into the transparent electrode film2 via the positive electrode contact portion 4. For example, thepositive electrode contact portion 4 is formed, for example, asillustrated in FIG. 1C, in an opposed manner on the ends on the sides onwhich the protective layer 3 is not formed on the transparent electrodefilm 2. In the present Embodiment, the positive electrode contactportion 4 is formed, as illustrated in FIG. 1C, along the opposing sideson the upper side and the lower side.

For the positive electrode contact portion 4, a metal material such asCr (chromium), Mo—Nd (molybdenum-neodymium), or Mo—Al—Mo(molybdenum-aluminium-molybdenum) is used. The positive electrodecontact portion 4 is formed by a method such as sputtering using ashadow mask or the like, and alternatively, it is possible to performphotoetching after the whole surface is formed with the film.

The negative electrode contact portion 5 is electrically connected tothe negative electrode film 9, and injects the electrons supplied to theorganic EL light emitting device 100 into the negative electrode film 9via the negative electrode contact portion 5. The negative electrodecontact portion 5 is formed on the protective layer 3 which has beenformed on the transparent electrode film 2 in advance. The protectivelayer 3 is a base for lift-up, and is used for forming the negativeelectrode contact portion 5 and the positive electrode contact portion 4in different layers so that the negative electrode contact portion 5 isnot electrically connected to the positive electrode contact portion 4.

At this time, since the protective layer 3 also serves as an interlayerinsulator, the positive electrode contact portion 4 and the negativeelectrode contact portion 5 which are positioned over and under theprotective layer 3 do not short. Since the positive electrode contactportion 4 and the negative electrode contact portion 5 are formed indifferent layers, the transparent electrode film 2 which is connected tothe positive electrode contact portion 4 and the negative electrode film9 which is connected to the negative electrode contact portion 5 arecapable of being arranged not to easily be electrically in contact witheach other.

For the negative electrode contact portion 5, the same metal material asthat of the positive electrode contact portion 4 can be used. Thenegative electrode contact portion 5 is formed by a method such assputtering using a shadow mask or the like, and alternatively, it ispossible to perform photoetching after the whole surface is formed withthe film. It is possible to form the positive electrode contact portion4 and the negative electrode contact portion 5 altogether in the sameprocess at the same time, resulting in no increase in the number ofprocess steps, thereby reducing the load of process.

The auxiliary electrode 6 is electrically connected to the positiveelectrode contact portion 4 via the transparent electrode film 2 ordirectly. For the auxiliary electrode 6, a metal material such as Cr(chromium), Mo—Nd (molybdenum-neodymium), Mo—Al—Mo(molybdenum-aluminium-molybdenum) is used. The auxiliary electrode 6 isformed on the transparent electrode film 2 by a method such assputtering using a shadow mask or the like. It is possible to form theauxiliary electrode 6 by performing photoetching in an arbitrary shapeafter a film is formed of a metal material. The auxiliary electrode 6 iselectrically connected to the positive electrode contact portion 4directly or via the transparent electrode film 2. In the presentEmbodiment, there is exemplified an example formed in gridlike fashionfor the auxiliary electrode 6, but the shape of the auxiliary electrode6 is not limited thereto.

Regarding the positive electrode contact portion 4, by using the samemetal material as that of the auxiliary electrode 6, it is possible toform the positive electrode contact portion 4 and the auxiliaryelectrode 6 altogether in the same process at the same time, resultingin no increase in the number of process steps, thereby reducing the loadof process. It is possible to form the positive electrode contactportion 4 and the auxiliary electrode 6 at the same time by a methodsuch as sputtering, or photoetching in an arbitrary shape after a filmis formed of a metal material.

It is possible to form the positive electrode contact portion 4 and theauxiliary electrode 6, as well as the negative electrode contact portion6 at the same time. It is possible to easily form the positive electrodecontact portion 4 and the negative electrode contact portion 5 at thesame time since the protective layer 3 and/or the below-mentionedinsulating layer 7 serve as a mask to surely separate the portions. Theportions are formed at the same time and it is possible to reduce thenumber of process steps.

It is not necessary to form the positive electrode contact portion 4 andthe negative electrode contact portion 5 at the same time even the samematerial is used since the heights of the points where the portions areformed from the substrate 1 are different. In the present Embodiment,usable film thicknesses of the positive electrode contact portion 4, thenegative electrode contact portion 5 and the auxiliary electrode 6 are,for example, 200 to 1000 nm.

The organic EL light emitting device 100 emits light at a light emittingsurface by injection of electrons and holes into a light emittingelement and the recombination of the electrons and holes. The auxiliaryelectrode 6 moderates the voltage drop due to the wiring resistance ofthe transparent electrode film 2 having a high sheet resistance, whichmakes easy uniform hole supply to the light emitting surface of theorganic EL light emitting device 100, thereby inhibiting in-planeluminance variation and maintain stable light emission.

The insulating layer 7 is formed along the positive electrode contactportion 4 and the negative electrode contact portion 5, and furtherformed between the positive electrode contact portion 4 and the negativeelectrode contact portion 5 and on the auxiliary electrode 6. Theinsulating layer 7 is formed such that a light emitting portion isopened in order to make the light emitting portion of the organic ELlight emitting device 100 into a predetermined shape. For example, asillustrated in FIG. 1D, a portion formed along the positive electrodecontact portion 4 and the negative electrode contact portion 5 forms anopening, and the region inside the opening is a light emitting portionof the organic EL light emitting device 100. A part of the insulatinglayer 7 is formed in gridlike fashion so that the auxiliary electrode 6is further covered inside the opening. Further, the insulating layer 7also serves as a planarizing film for the lower layer. For theinsulating layer 7, the same material as the protective layer 3 isemployable, and a photoresist material having photosensitivity such asnovolac, acrylic, polyimide material, an inorganic material film such assilicon nitride (SiNx) film or a silicon oxide (SiOx) film. Theinsulating layer 7 is capable of being formed by, after application,being subjected to patterning by photolithography or being subjected tousing vacuum vapor deposition or chemical vapor deposition (CVD:Chemical Vapor Deposition) and patterning by shadow mask orphotoetching. In the present Embodiment, the usable film thickness whena resist material is used for the insulating layer 7 is, for example,500 to 1500 nm; and the usable film thickness when an inorganic materialis used is, for example, 200 to 600 nm.

The organic light emitting layer 8 serves as a light emitting layer, andformed on the transparent electrode film 2 where the insulating layer 7is not formed and on the insulating layer 7. At this time, it ispossible that a part of the organic light emitting layer 8 is formed onthe insulating layer 7 as long as the organic light emitting layer 8 isformed on a portion surrounded by the insulating layer 7. Since theinsulating layer 7 serves as a mask, patterning is capable of beingperformed in a self alignment manner. The organic light emitting layer 8is formed in any manner as long as there is no risk of electricallyconnecting the transparent electrode film 2 and the negative electrodecontact portion 5 directly via the organic light emitting layer 8. Atthis time, the organic light emitting layer 8 is preferably providedwith a hole injection/transport layer such as triphenyl aminederivatives on the transparent electrode film 2. It is possible that theorganic light emitting layer 8 is further provided with an electrontransport layer such as triazole derivatives between the organic lightemitting layer 8 and the negative electrode film 9.

The negative electrode film 9 is formed on the organic light emittinglayer 8. The negative electrode film 9 is electrically connected to thenegative electrode contact portion 5, and injects the electrons suppliedto the organic EL light emitting device 100 into the negative electrodefilm 9 via the negative electrode contact portion 5. The negativeelectrode film 9 is formed of a metal material such as Al (aluminium).At this time, the negative electrode film is formed on an electroninjection layer such as LiF (lithium fluoride) which has been providedin advance. In the present Embodiment, the usable film thickness ofnegative electrode film 9 is, for example, 50 to 300 nm.

It is possible to supply power to the negative electrode layer 9 atanywhere from a power source. It is also possible to supply power fromfour directions by forming the film such that the outer peripheryportion of the negative electrode film 9 is thick.

When the organic light emitting layer 8 is provided with, a holeinjection layer, a hole transport layer, and a electron transport layerother than the light emitting layer, it is desired that the transparentelectrode film 2, a hole injection layer, a hole transport layer, alight emitting layer, and a electron transport layer be successivelyformed. In order to improve the recombination probability to improve theluminescence quantum efficiency, it is possible to use a hole blockinglayer between a light emitting layer and an electron transport layer.Further, the organic light emitting layer 8 is not limited to beconstituted by one light emitting layer, and it is also possible thatthe organic light emitting layer 8 is constituted by two light emittinglayers. The constitution of the organic light emitting layer 8 isappropriately changed. When the light emitting layer serves as a holeinjection/transport layer, the transparent electrode film 2, it ispossible that the light emitting layer, and a electron transport layerare formed in the order mentioned. When the light emitting layer servesas an electron transport layer, the transparent electrode film 2, a holeinjection/transport layer, and a light emitting layer are formed in theorder mentioned. It is possible that the organic light emitting layer 8is constituted by one layer including only a light emitting layer. Inthe present Embodiment, the usable total film thickness of the organiclight emitting layer 8 is, for example, 100 to 500 nm.

In the following, the manufacturing method of the organic EL lightemitting device 100 will be described in detail. First, as illustratedin FIG. 1A, the transparent electrode film 2 is formed by a transparentconductive material such as indium tin oxide (ITO) uniformly onsubstantially the whole surface of the substrate 1 formed of a materialsuch as non-alkali glass. The formation of the transparent electrodefilm 2 is performed by physical vapor deposition (PVD) such assputtering or vacuum vapor deposition.

Next, on opposing side edge portions of the transparent electrode film2, the protective layer 3 is formed (see FIG. 1B). By this protectivelayer 3, a base which is lifted up from the transparent electrode film 2is formed and it becomes possible to form the negative electrode contactportion 5 formed in FIG. 1C and the positive electrode contact portion 4in different layers to easily separate a positive electrode from anegative electrode.

In FIG. 1C, the negative electrode contact portion 5 is formed on theprotective layer 3, and the positive electrode contact portion 4 isformed on opposing side edge portions of the transparent electrode film2 where the protective layer 3 is not formed. On the transparentelectrode film 2, the auxiliary electrode 6 is formed. The positiveelectrode contact portion 4, the negative electrode contact portion 5and the auxiliary electrode 6 are formed by sputtering a metal materialsuch as Cr (chromium), Mo—Nd (molybdenum-neodymium) and Mo—Al—Mo(molybdenum-aluminium-molybdenum) by using a shadow mask or the like. Itis also possible to perform photoetching after a film is formed of ametal material.

At this time, the organic EL light emitting device 100 is formed suchthat the organic EL light emitting device 100 is electrically connectedto a power source which is connected to the outside of the organic ELlight emitting device 100 via the positive electrode contact portion 4;similarly, the organic EL light emitting device 100 is formed such thatthe organic EL light emitting device 100 is electrically connected to apower source which is connected to the outside of the organic EL lightemitting device 100 via the negative electrode contact portion 5. Theprotective layer 3 is formed in advance, and the negative electrodecontact portion 5 is form thereon, whereby the positive electrodecontact portion 4 and the negative electrode contact portion 5 areformed in different layers, which makes easy to electrically insulatethe positive electrode contact portion 4 and the negative electrodecontact portion 5 each other.

In FIG. 1D, in order to perform patterning, the insulating layer 7 isformed integrally at the same time, for example, by photoresist. Theinsulating layer 7 is formed on the auxiliary electrode 6. Theinsulating layer 7 covers other than the light emitting surface to fitthe light emitting shape of the organic EL light emitting device 100.Further, the insulating layer 7 is formed between the positive electrodecontact portion 4 and the negative electrode contact portion 5, andbetween the transparent electrode film 2 and the negative electrodecontact portion 5, respectively, to maintain insulation and preventshort circuiting.

It is also possible that the insulating layer 7 is formed of aphotoresist which is a material having photosensitivity, and it is alsopossible that the insulating layer 7 is formed by making a film by amaterial for inorganic layer such as SiNx or SiOx by vacuum vapordeposition or a CVD method, and then being subjected to patterning byshadow mask or photoetching.

Subsequently, as illustrated in FIG. 1E, on the transparent electrodefilm 2 on which the insulating layer 7 is formed in FIG. 1D, the organiclight emitting layer 8 is formed. The organic light emitting layer 8 isformed such that the transparent electrode film 2 and the negativeelectrode contact portion 5 are not electrically connected directly viathe organic light emitting layer 8. At this time, it is possible thatthe organic light emitting layer 8 is formed such that a part of theorganic light emitting layer 8 is laid on the insulating layer 7 havinga predetermined width which is formed to cover the outer periphery ofthe transparent electrode film 2, for example, a part of the organiclight emitting layer 8 is laid surroundingly on the insulating layer 7.The insulating layer 7 serves as a mask, which eliminates the need for ashadow mask requiring a high alignment precision, and makes the processsimple. As illustrated in FIG. 2 and FIG. 3, it is possible that theorganic light emitting layer 8 is formed on the insulating layer 7having a width, which eliminates the need for high precisionpositioning.

FIG. 3B is a configuration cross section of the organic EL lightemitting device, which is a variation of the configuration cross sectionof the organic EL light emitting device illustrated in FIG. 3A. In FIG.3A, the organic EL light emitting device 100 is formed such that theinsulating layer 7 covers a part of the positive electrode contactportion 4; as illustrated in FIG. 3B, it is also possible that thepositive electrode contact portion 4 and the insulating layer 7 areadjacently formed. As illustrated in the right side of FIG. 3B, it ispossible that there is formed a gap between the positive electrodecontact portion 4 and the insulating layer 7.

In FIG. 1F, on the organic light emitting layer 8, the negativeelectrode film 9 is formed to complete the manufacturing process of theorganic EL light emitting device 100. The negative electrode film 9 is,as illustrated in FIG. 2, formed to cover a part of the negativeelectrode contact portion 5 such that the negative electrode film 9 iselectrically connected to a power source which is connected to theoutside of the organic EL light emitting device 100 via the negativeelectrode contact portion 5. The negative electrode film 9 is formedsuch that the negative electrode film 9 is not in direct contact withthe positive electrode contact portion 4, and further, such that thenegative electrode film 9 is not electrically connected to the positiveelectrode contact portion 4. At this time, it is possible that thenegative electrode film 9 is formed such that a part of the negativeelectrode film 9 is laid on the insulating layer 7 having apredetermined width which is formed to cover the outer periphery of thetransparent electrode film 2, for example, a part of the negativeelectrode film 9 is laid surroundingly on the insulating layer 7. Theinsulating layer 7 serves as a mask, which eliminates the need for ashadow mask requiring a high alignment precision, and makes the processsimple. As illustrated in FIG. 3, it is possible that the negativeelectrode film 9 is formed on the insulating layer 7 having a width,which eliminates the need for high precision positioning.

As explained above, by the organic EL light emitting device relating toEmbodiment 1 of the present invention, it is possible to make theprocess simple, and increase the aperture ratio. More specifically,since the protective layer and the insulating layer surely insulate thepositive electrode from the negative electrode, it is possible to makethe process simple and the positive electrode contact portion and thenegative electrode contact portion bring about a narrow frame, therebyincreasing the aperture ratio.

By using the manufacturing method of Embodiment 1, the shape of atransparent electrode film such as ITO is made simple, and it ispossible to prevent short circuiting while eliminating the need for ahigh alignment precision, and it is also possible to reduce the totalnumber of processes.

In particular, in the present Embodiment, the transparent electrode filmis not formed into a light emitting shape, but made into a predeterminedlight emitting shape of the organic EL light emitting device by coveringthe transparent electrode film with a protecting film or the like.Therefore, there is no need performing patterning on the transparentelectrode film by photoetching or the like, and thus irregularity orroughness on the surface of the transparent electrode film does notoccur. As the result, the process becomes simple, as well as, shortcircuiting does not occur, which leads to decrease in the defect ratio.

By forming the positive electrode contact portion and the negativeelectrode contact portion in different layers, there is no risk of shortcircuiting due to the contact. It is also possible to make theconnection between the transparent electrode film which is a positiveelectrode and the positive electrode contact portion, and the connectionbetween the negative electrode film and the negative electrode contactportion sure. By the connection with each of electrode portions formedin optional shapes, it becomes possible to form an organic EL lightemitting device having a large aperture. Further, in the design of theorganic EL light emitting device, the frame is capable of being madenarrow, by which the total luminous flux improves, thereby enablingpower-saving.

Embodiment 2

FIGS. 4A-4F are configuration plan views illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 2 of the present invention. FIG. 5 is a configuration crosssection of an organic EL light emitting device relating to Embodiment 2.FIGS. 5A and 5B illustrate cross sections taken along line Y2-Y2 in FIG.4F. FIG. 5C illustrates a cross section taken along line X2-X2 in FIG.4F.

In an organic EL light emitting device 101 relating to Embodiment 2, apositive electrode contact portion 4 is provided at the peripherythereof and power is supplied from four directions. However, that atransparent electrode film 2 is formed without a gap on a substrateacross an area including areas of layers other than the transparentelectrode film 2 and that the positive electrode contact portion 4 and anegative electrode contact portion 51 are formed in different layers aresimilar to the organic EL light emitting device 100 relating toEmbodiment 1.

Specifically, the organic EL light emitting device 101 relating toEmbodiment 2 is formed by covering the positive electrode contactportion 4 which also serves as a power supplying portion to an organicEL element with a protective layer (insulating layer 7) and laminatingthereon a negative electrode contact portion 5 which also serves as thepower supplying portion to the organic EL element and a negativeelectrode contact and negative electrode takeoff portion 51(hereinafter, referred to as “negative electrode takeoff portion 51”).In Embodiment 2, it is possible that the protective layer 3 and theinsulating layer 7 in Embodiment 1 are formed integrally by the samematerials at the same time (in the same process). In FIGS. 4C to 4F, theinsulating layer 7 is illustrated to include the protective layer 3. Inother words, in Embodiment 2, the insulating layer 7 has a function ofthe protective layer 3 in Embodiment 1 (a transparent electrode film anda positive electrode contact portion are separated and electricallyinsulated from the negative electrode contact portion).

The organic EL light emitting device 101 comprises a substrate 1, atransparent electrode film (positive electrode film) 2, a positiveelectrode contact portion 4, a positive electrode contact hole andpositive electrode takeoff portion 41 (hereinafter, referred to as“positive electrode contact hole portion 41”), a negative electrodetakeoff portion 51, an auxiliary electrode 6, an insulating layer 7, anorganic light emitting layer 8, and a negative electrode film 9.

In the manufacturing method of the organic EL light emitting device 101,first, as illustrated in FIG. 4A, the transparent electrode film 2 isformed uniformly on substantially the whole surface of the substrate 1.On the periphery of the transparent electrode film 2, the positiveelectrode contact portion 4 is formed in a ring shape; on thetransparent electrode film 2, the auxiliary electrode 6 is also formed(see FIG. 4B).

Next, the insulating layer 7 is formed such that the positive electrodecontact portion 4 and the auxiliary electrode 6 are covered. At the sametime, the insulating layer 7 is formed to open a light emitting portionto fit the light emitting shape of the organic EL light emitting device101. An opening of the insulating layer 7 illustrated in FIG. 4C wherethe transparent electrode film 2 is exposed is the light emittingportion. At the same time, the positive electrode contact hole portion41 is formed such that a spot on which the positive electrode contacthole portion 41 is formed on the positive electrode contact portion 4 isnot covered by the insulating layer 7 (see FIG. 4C). Since it ispossible to perform this process at the same time as a process ofpatterning the insulating layer 7, the number of process procedures doesnot increase.

As illustrated in FIG. 4D, the organic light emitting layer 8 is thenformed to cover the whole portion of the transparent electrode film 2which is not covered by the positive electrode contact portion 4, theauxiliary electrode 6 and the insulating layer 7. Further, asillustrated in FIG. 4E, the negative electrode film 9 is formed to coverorganic light emitting layer 8. The negative electrode takeoff portion51 which is in contact with at least a part of the negative electrodefilm 9 and is electrically connected thereto is formed to complete themanufacturing of the organic EL light emitting device 101 (see FIG. 4F).As illustrated in FIG. 4F, the negative electrode takeoff portion 51 isformed such that the negative electrode takeoff portion 51 is in contactwith the circumferential edges of the negative electrode film 9 tosurround substantially the whole circumference of the negative electrodefilm 9. By this, it is possible to supply power to the negativeelectrode film 9 evenly from four sides, which reduces luminanceunevenness of the light emitting of the organic light emitting layer 8.

In FIGS. 4D and 4E, it is possible that the organic light emitting layer8 and the negative electrode film 9 are formed such that a part of eachof the organic light emitting layer 8 and the negative electrode film 9is laid on the insulating layer 7 having a predetermined width, forexample in a circumferential shape. As the result, this eliminates theneed for a shadow mask requiring a high alignment precision, and itbecomes possible to make the process simple.

FIGS. 5A and 5C illustrate a case where the organic light emitting layer8 is not interposed between the positive electrode contact portion 4 andthe negative electrode film 9. FIG. 5B illustrates a cross section in acase where the organic light emitting layer 8 overreaches from theopening of the insulating layer 7 further to the position of thepositive electrode contact portion 4. As illustrated in FIGS. 5A to 5C,since the positive electrode contact portion 4, and the negativeelectrode film 9 and the negative electrode takeoff portion 51 areformed in different layers, it is possible to form the negativeelectrode film 9 and the negative electrode takeoff portion 51 as far asthe very edge of the insulating layer 7.

FIG. 6 is a configuration plan view illustrating another configurationof the organic EL light emitting device relating to Embodiment 2. InFIG. 6, the negative electrode takeoff portion 51 is arranged at acorner adjacent to the positive electrode contact hole portion 41. It ispossible that the negative electrode takeoff portion 51 is arranged atan optional position as long as the negative electrode takeoff portion51 is in contact with at least a part of the negative electrode film 9.

FIGS. 7A and 7B are configuration cross section of another configurationof the organic EL light emitting device relating to Embodiment 2,illustrating cross sections taken along line Y3-Y3 in FIG. 6. Asillustrated in FIGS. 7A and 7B, since the positive electrode contactportion 4, and the negative electrode film 9 and negative electrodetakeoff portion 51 are formed in different layers, it is possible toform the negative electrode film 9 and the negative electrode takeoffportion 51 as far as the very edge of the insulating layer 7. As isclear from FIGS. 4 to 7, it is possible that the positive electrodecontact hole portion 41 and the negative electrode takeoff portion 51are freely arranged as long as the positive electrode contact holeportion 41 is not overlapped by the negative electrode film 9 or thenegative electrode takeoff portion 51.

As explained above, by the organic EL light emitting device relating toEmbodiment 2 of the present invention, the process becomes simple and itis possible to increase the aperture ratio.

By using the manufacturing method of Embodiment 2, it is possible thatthe shape of the transparent electrode film such as ITO is made simple,and short circuiting is prevented while eliminating the need for a highalignment precision. It is also possible to reduce the number of wholeprocess procedures. It is possible that the positive electrode contactportion is formed surroundingly from four sides, thereby reducingin-plane luminance variation.

Embodiment 3

FIGS. 8A-8F are configuration plan views illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 3 of the present invention. FIGS. 9A and 9B are configurationcross sections of an organic EL light emitting device relating toEmbodiment 3, illustrating a cross section taken along line X4-X4 inFIG. 8F. FIG. 10 is a configuration cross section of an organic EL lightemitting device relating to Embodiment 3, illustrating a cross sectiontaken along line Y4-Y4 in FIG. 8F.

In an organic EL light emitting device 102 relating to Embodiment 3, anegative electrode contact portion 5 is formed on a positive electrodecontact portion 4 sandwiching a protective layer 3. However, that atransparent electrode film 2 is formed without a gap on a substrateacross an area including areas where layers other than the transparentelectrode film 2 are formed and that the positive electrode contactportion 4 and a negative electrode contact portion 5 are formed indifferent layers are similar to the organic EL light emitting device 100relating to Embodiment 1.

The organic EL light emitting device 102 comprises a substrate 1, atransparent electrode film (positive electrode film) 2, a positiveelectrode contact portion 4, a positive electrode contact hole portion41, a negative electrode contact portion 5, an auxiliary electrode 6, aninsulating layer 7, an organic light emitting layer 8, and a negativeelectrode film 9.

The manufacturing method of the organic EL light emitting device 102relating to Embodiment 3 will be explained by way of FIG. 8. First, asillustrated in FIG. 8A, the transparent electrode film 2 is uniformlyformed on substantially the whole surface of the substrate 1.

Next, the positive electrode contact portion 4 is formed such that thepositive electrode contact portion 4 surrounds the circumference of thetransparent electrode film 2, for example, in a ring shape. In addition,the auxiliary electrode 6 is formed on the transparent electrode film 2.It is possible that the positive electrode contact portion 4 and theauxiliary electrode 6 are formed at the same time (see FIG. 8B). Theprotective layer 3 is then formed, for example in a ring shape, suchthat the positive electrode contact portion 4 excepting a part of thepositive electrode contact portion 4 is covered. At this point, aninside portion which is surrounded by the protective layer 3 (the insideof the opening of the protective layer 3) becomes the light emittingshape of organic EL light emitting device 102 (light emitting portion).Here, in the present Embodiment, the protective layer 3 is formed suchthat the light emitting portion is opened, and the protective layer 3has a function of the insulating layer 7 in Embodiment 1. The insulatinglayer 7 is formed in gridlike fashion such that the insulating layer 7covers the auxiliary electrode 6 (see FIG. 8C). At this time, theprotective layer 3 is formed on the positive electrode contact portion 4excluding a part thereof to secure an electrode takeoff portion forsupplying power from the positive electrode contact portion 4. It ispossible that the protective layer 3 is not distinguished from theinsulating layer 7, and that they are made of the same material and areformed at the same time. By forming the protective layer 3 and theinsulating layer 7 at the same time, the number of processes does notincrease and it is possible to reduce the number of manufacturingprocesses.

As illustrated in FIG. 8D, the negative electrode contact portion 5 isformed on the protective layer 3 and/or the insulating layer 7. At thistime, by forming the negative electrode contact portion 5 such that thenegative electrode contact portion 5 surrounds the circumference of thetransparent electrode film 2 excluding the portion where the positiveelectrode contact portion 4 is exposed, it is possible that thebelow-mentioned negative electrode film 9 which is to be arranged andthe negative electrode contact portion 5 are brought into contactsubstantially from four directions, thereby reducing in-plane luminancevariation.

Thereafter, as illustrated in FIG. 8E, the organic light emitting layer8 is formed avoiding the positive electrode contact portion 4. Asillustrated in FIG. 8F, the negative electrode film 9 is formed avoidingthe positive electrode contact portion 4 to complete the manufacturingof the organic EL light emitting device 102.

In FIG. 8E and FIG. 8F, it is possible that the organic light emittinglayer 8 and the negative electrode film 9 are formed such that a part ofeach of the organic light emitting layer 8 and the negative electrodefilm 9 is laid on the protective layer 3 and/or the insulating layer 7having a predetermined width. As the result, this eliminates the needfor a shadow mask requiring a high alignment precision, and it becomespossible to make the process simple.

FIGS. 9A and 9C illustrate a case where the organic light emitting layer8 is not interposed between the positive electrode contact portion 4 andthe negative electrode film 9. FIG. 9B illustrates a cross section in acase where the organic light emitting layer 8 overreaches from theaperture of the insulating layer 7 further to the position of thepositive electrode contact portion 4. As illustrated in FIGS. 9A to 9C,since the positive electrode contact portion 4, and the negativeelectrode film 9 and the negative electrode takeoff portion 51 areformed in different layers, it is possible to form the negativeelectrode film 9 and the negative electrode takeoff portion 51 as far asthe very edge of the insulating layer 7. As

FIGS. 11A-11F are configuration plan views illustrate the result, it ispossible that the aperture ratio of the light emitting shape is madelarge.ng one example of the manufacturing process of an organic EL lightemitting device relating to a modification of Embodiment 3 of thepresent invention. FIG. 12 is a configuration cross section of anorganic EL light emitting device relating to a modification ofEmbodiment 3, illustrating a cross section taken along line Y5-Y5 inFIG. 11F.

In the modification of Embodiment 3 of the present invention, althoughthe organic EL light emitting device has basically the same structure asthat of the organic EL light emitting device 102 relating to Embodiment3, the organic EL light emitting device comprises the positive electrodecontact hole portion 41 in which a hole is formed on a part of theinsulating film or the like, and power is supplied via the positiveelectrode contact hole portion 41.

The manufacturing method of the organic EL light emitting device 103relating to the modification of Embodiment 3 will be explained by way ofFIG. 11. First, as illustrated in FIG. 11A, the transparent electrodefilm 2 is formed uniformly substantially the whole surface of thesubstrate 1.

Next, the positive electrode contact portion 4 is formed in a ring shapesubstantially surroundingly along the outermost periphery portion insidethe outermost periphery portion avoiding the outermost periphery portionof the transparent electrode film 2. The auxiliary electrode 6 is formedon the transparent electrode film 2. The positive electrode contactportion 4 and the auxiliary electrode 6 are formed at the same time (seeFIG. 11B).

The protective layer 3 is formed on a circumference portion includingthe outermost periphery portion of the transparent electrode film 2 andthe positive electrode contact portion 4 positioned inside the outermostperiphery portion such that the protective layer 3 covers thecircumference portion including the transparent electrode film 2 and thepositive electrode contact portion 4 excluding a portion (a part to be ahole for forming the positive electrode contact hole portion 41). Atthis point, an inside portion which is surrounded by the protectivelayer 3 (the inside of the opening of the protective layer 3) becomesthe light emitting shape of organic EL light emitting device 102 (lightemitting portion). Here, in the present Embodiment, the protective layer3 is formed such that the light emitting portion is opened, and theprotective layer 3 has a function of the insulating layer 7 inEmbodiment 1. The insulating layer 7 covers the auxiliary electrode 6(see FIG. 11C).

At this time, a hole is provided on a part which covers the positiveelectrode contact portion 4 to form the protective layer 3. The hole isthe positive electrode contact hole portion 41 and serves as anelectrode takeoff portion for supplying power via the positive electrodecontact portion 4 (see FIG. 12). It is possible that the protectivelayer 3 is not distinguished from the insulating layer 7, and that theyare made of the same material and are formed at the same time.

As illustrated in FIG. 11D, the negative electrode contact portion 5 isformed on the protective layer 3 along the outer periphery portion ofthe transparent electrode film 2. By providing a part where the positiveelectrode contact portion 4 is not formed under the protective layer 3,it is possible to form the transparent electrode film 2, the protectivelayer 3 and the negative electrode contact portion 5 on the substrate 1in the order mentioned thereby reducing the whole thickness. It ispossible that the negative electrode contact portion 5 and the positiveelectrode contact portion 4 are surely electrically insulated by theprotective layer 3 (see FIG. 12).

Thereafter, as illustrated in FIG. 11E, the organic light emitting layer8 is formed avoiding the positive electrode contact hole portion 41; asillustrated in FIG. 11F, the negative electrode film 9 is formedavoiding the positive electrode contact hole portion 41 (see FIG. 12),to complete the manufacturing of the organic EL light emitting device103.

In FIG. 11E and FIG. 11F, it is possible that the organic light emittinglayer 8 and the negative electrode film 9 are formed such that a part ofeach of the organic light emitting layer 8 and the negative electrodefilm 9 is laid on the protective layer 3 and/or the insulating layer 7having a predetermined width As the result, this eliminates the need fora shadow mask requiring a high alignment precision, and it becomespossible to make the process simple. As is clear from FIG. 12, since thepositive electrode contact portion 4 and the auxiliary electrode 6 arecovered by the protective layer 3 or the insulating layer 7 and thenegative electrode film 9 and the negative electrode takeoff layer 51are insulated from each other, the negative electrode film 9 and thepositive electrode contact portion 4 do not short even when the edge ofthe organic light emitting layer 8 is positioned over the positiveelectrode contact portion 4.

As explained above, by the organic EL light emitting device relating toEmbodiment 3 and the modification of Embodiment 3 of the presentinvention, the process becomes simple and it is possible to increase theaperture ratio.

By using the manufacturing method of Embodiment 3, it is possible thatthe shape of the transparent electrode film such as ITO is made simple,and short circuiting is prevented while eliminating the need for a highalignment precision. It is also possible to reduce the number of wholeprocess procedures. It is possible that the positive electrode contactportion is formed surroundingly from four sides, thereby reducingin-plane luminance variation.

It is possible that the connection between the transparent electrodefilm which is a positive electrode and the positive electrode contactportion, and the connection between the negative electrode film and thenegative electrode contact portion are individually ensured, and it isfurther possible that power is surely connected to the outer peripheryportion of the organic EL light emitting device. As the result, itbecomes possible to form an organic EL light emitting device connectablewith and having less effect on the shape of the organic EL and having alarge aperture. It is also possible to attain an organic EL lightemitting device whose power supply is stable. Further, as illustrated inthe modification of Embodiment 3, by forming the device such that thepositive electrode contact portion and the negative electrode contactportion are not overlapped vertically, it is possible to form an organicEL light emitting device having a small thickness.

Embodiment 4

FIGS. 13A-13G are configuration plan views illustrating one example of amanufacturing process of an organic EL light emitting device relating toEmbodiment 4 of the present invention. In the organic EL light emittingdevice relating to Embodiment 4, a negative electrode contact portion isformed on the outer periphery of a positive electrode contact portion.However, that a transparent electrode film is formed without a gap on asubstrate across an area including areas of layers other than thetransparent electrode film and that the positive electrode contactportion and a negative electrode contact portion are formed in differentlayers are similar to the organic EL light emitting device relating toEmbodiment 1.

Specifically, the organic EL light emitting device 104 relating toEmbodiment 4 comprises a negative electrode contact portion 5 at theouter periphery of a positive electrode contact portion 4. The negativeelectrode contact portion 5 has a discontinuous shape, and on the gapportion, there is provided the positive electrode contact hole portion41 for the external connection via the positive electrode contactportion 4.

The organic EL light emitting device 104 comprises a substrate 1, atransparent electrode film (positive electrode film) 2, a protectivelayer 3, a positive electrode contact portion 4, a positive electrodecontact hole portion 41, a negative electrode contact portion 5, anauxiliary electrode 6, an insulating layer 7, an organic light emittinglayer 8, and a negative electrode film 9.

In the manufacturing method of the organic EL light emitting device 104relating to Embodiment 4, first, as illustrated in FIG. 13A, thetransparent electrode film 2 is uniformly formed on substantially thewhole surface of the substrate 1. A protecting film 31 is formed in aring shape on the outer periphery portion of the transparent electrodefilm 2 avoiding a center portion of the transparent electrode film 2(see FIG. 13B). The positive electrode contact portion 4 is formed incontact with the inner circumference of the transparent electrode film 2facing an inside portion which is not covered by the protecting film 31.Further, the positive electrode contact hole portion 41 connecting tothe positive electrode contact portion is formed, and the auxiliaryelectrode 6 is formed on the transparent electrode film 2 (see FIG.13C).

The protective layer 3 is further formed on the outer periphery of thesubstrate 1, namely on the protective layer 31 avoiding the positiveelectrode contact portion 4 and the positive electrode contact holeportion 41. In addition, the insulating layer 7 is formed to comprise anopening to fit the light emitting shape of the organic EL light emittingdevice 104. The inside region of the opening is a light emitting portionof the organic EL light emitting device 100 (light emitting region). Apart of the insulating layer 7 is formed in gridlike fashion such thatthe part of the insulating layer 7 further covers the auxiliaryelectrode 6 inside the opening (see FIG. 13D). It is possible that theprotective layer 3 and the insulating layer 7 are formed of the samematerial and formed at the same time. When the protective layer 31 isformed in FIG. 13B, it is possible that the transparent electrode film 2is covered by the protective layer 31 to fit the light emitting shape inadvance to omit the process of covering the portion other than the lightemitting surface of the transparent electrode film 2 by the insulatinglayer 7 in FIG. 13D.

In FIG. 13E, negative electrode contact portion 5 is formed on theformed protective layer 3. At this time, the negative electrode contactportion 5 is on the protective layer 3, and the negative electrodecontact portion 5 and the positive contact portion 4 are formed indifferent layers. As illustrated in FIG. 11F, it is possible that thenegative electrode contact portion 5 has a shape in which the positiveelectrode contact hole portion 41 is surrounded by the negativeelectrode contact portion 5.

Thereafter, as illustrated in FIG. 13F, the organic light emitting layer8 is formed. As illustrated in FIG. 13G, the negative electrode film 9is formed to complete the manufacturing of the organic EL light emittingdevice 104.

In FIG. 13F and FIG. 13G, it is possible that the organic light emittinglayer 8 and the negative electrode film 9 are formed such that a part ofeach of the organic light emitting layer 8 and the negative electrodefilm 9 is laid on the insulating layer 7 having a predetermined width Asthe result, this eliminates the need for a shadow mask requiring a highalignment precision, and it becomes possible to make the process simple.

FIGS. 14A-14C are configuration plan views illustrating one example ofthe manufacturing process of an organic EL light emitting devicerelating to a modification of Embodiment 4 of the present invention. Asillustrated in FIG. 14A, the state in which the transparent electrodefilm (positive electrode film) 21 formed on the substrate 1 is formedavoiding the outer periphery of the substrate 1 in advance, issubstantially the same the state in which processes in FIG. 13A and FIG.13B are completed.

Next, as illustrated in FIG. 14B, the positive electrode contact portion4 is formed directly on the substrate 1 in contact with thecircumference of the transparent electrode film 21. As illustrated inFIG. 14C, the protective layer 3 is formed avoiding the positiveelectrode contact portion 4 and positive electrode contact hole portion41. The insulating layer 7 is formed to cover the auxiliary electrode 6.At the same time, the insulating layer 7 is formed to open the lightemitting portion to fit the light emitting shape of the organic EL lightemitting device 104.

The process in FIG. 14C is substantially similar to the process in FIG.13D except that in place of forming the protective layer 3 on theprotective layer 31, the protective layer 3 is formed on the substrate1. The processes in FIG. 14C and forward are the same as the processesin FIG. 13D and forward. As in a modification of Embodiment 4 of thepresent invention in FIG. 14, when the transparent electrode film 21 isformed on the substrate 1 avoiding the outer periphery portion, it ispossible that a part of the manufacturing processes is omitted.

FIGS. 15A and 15B illustrate one example of the shape of the organic ELlight emitting device relating to Embodiment 4. Dotted lines in thefigures represent the light emitting shape. In particular, when thedevice is manufactured by the manufacturing method of an organic ELlight emitting device relating to Embodiment 4, it is possible to makethe flexibility of the shape of the organic EL light emitting devicehigh.

FIG. 15A illustrates an example of a heart-shaped organic EL lightemitting device. FIG. 15B illustrates an example of a star-shapedorganic EL light emitting device. The organic EL light emitting devicecomprises a positive electrode covered by an insulating film andinsulated from a negative electrode contact at a part anywhere on thecircumference surrounded by a negative electrode contact. As illustratedin FIG. 15, it is possible to manufacture an organic EL light emittingdevice even when the light emitting surface has a relatively complexshape such as it has a curved line or multiple sides not a rectangle.

As explained above, by the organic EL light emitting device relating toEmbodiment 4 of the present invention, the process becomes simple and itis possible to increase the aperture ratio.

By using the manufacturing method of Embodiment 4, it is possible thatthe shape of the transparent electrode film such as ITO is made simple,and short circuiting is prevented while eliminating the need for a highalignment precision. It is also possible to reduce the number of wholeprocess procedures. It is possible that the positive electrode contactportion is formed surroundingly from four sides, thereby reducingin-plane luminance variation.

In addition, it is possible to form a surface light emitting element inan arbitrary shape, and it is possible to attain an organic EL lightemitting device with high designability. Since the surface lightemitting element has an arbitrary shape, the number of components whenthe organic EL light emitting device is used as an illumination deviceis reduced, which eliminates the need for a light emitting element whichis not needed for light emission. As the result, a low cost or anenergy-saving property is obtained.

Further, regardless of the shape of the organic EL light emittingdevice, by forming the light emitting shape of the light emittingsurface by covering the portion other than the light emitting surfaceusing a resist, there is no risk of render a transparent electrode filmsuch as ITO defective, and reduction in the defect ratio and simplemanufacturing are attained. In addition, it is possible to make the areaof an edge portion serving as an electrode takeoff portion small, toattain an illumination device having a high aperture ratio.

In a related art, since a negative electrode-side electrode takeoffportion (negative electrode contact portion) is formed of ITO, and thecontact with a negative electrode formed of Al becomes Al-ITO, and thusthe Schottky contact property is high, causing a problem that an ohmiccontact is not obtained. In addition, a problem of decrease inreliability of the electrode portion has occurred, for example, thecontact resistance is increased because oxygen in the ITO is pulled outby Al. Further, since the electrode takeoff portion (electrode contactportion) of the positive electrode and the negative electrode is ITO,the wiring resistance thereof is high and the contact resistance withwirings for a power source is large, and therefore, the driving voltageis elevated and a large amount of electric power is required, which havebeen problematic.

However, since, in the organic EL light emitting device of the presentEmbodiment, the electrode contact portion is formed of a metal, theportion has a higher reliability than that of an ITO takeoff of arelated art, which reduces the contact resistance and the wiringresistance. The degree of rise in the driving voltage is reduced,thereby enabling power-saving.

In addition, the wiring resistance becomes high for reasons such as thata transparent electrode layer which is an anode and a cathode layer usedfor the organic EL element has a high specific resistance, or that thelayers have a high sheet resistance since they are a thin layer eventhough the layers are made of a metal. The wiring resistance becomeshigh depending on whether there is a power supplying terminal portion(side) or not, or the distance from a power supplying terminal portion.Further, there has occurred a problem that luminance unevenness occursdue to a voltage drop. However, in the organic EL light emitting deviceof the present Embodiment, input from each of four sides of the anodeand/or the cathode is possible, and the wiring resistance is mademinimum, leading to improvement of luminance unevenness, therebyenabling power-saving.

The manufacturing method of an organic EL light emitting device of thepresent invention eliminates the need for patterning of an transparentelectrode such as ITO, whereby ITO film is formed only by a filmformation. By this, etching roughness on the surface or the edge of ITOdoes not occur, and it is possible to eliminate photoetching and/orphotolithography process accompanied by ITO patterning.

Further, it is possible to obtain an effect when multiple surfacepatterns is performed on a large-scale substrate during production inlarge quantities. By using the organic EL light emitting device of thepresent invention, it is possible to obtain a very large effect in viewof the reliability and cost.

Example 1

An organic EL light emitting device having a structure corresponding toEmbodiment 1 was manufactured. A light emitting area of the lightemitting area of the organic EL light emitting device was 100 mm×100 mm,and a white light was emitted. As a transparent electrode film, ITOhaving a film thickness of 110 nm was used. In the present Example, theorganic layer (organic light emitting layer) had a six-layered structurein which a hole injection layer, a hole transport layer, a lightemitting layer (a first light emitting layer and a second light emittinglayer), a hole blocking layer and an electron transport layer arelaminated in the order mentioned.

The hole injection layer was formed by using Cu-Pc (copperphthalocyanine) as a hole injection material. The hole transport layerwas formed by usingα-NPD(N,N′-diphenyl-N-N-bis(1-naphthyl)-1,1′-biphenyl)-4,4′-diamine) asa hole transport material. For the first light emitting layer, oneformed by using CBP(4,4′-biscarbazolylbiphenyl) as a host and by dopingIr(ppy)₃(tris-(2phelynyl pyridine)iridium complex) andBtp₂Ir(acac)(bis(2-(2′-benzo(4,5-α)thienyl)pyridinate-N,C2′)(acetylacetonate)iridiumcomplex) was used. Further, for the second light emitting layer, oneformed by using CBP as a host, and dopingFIr(pic)((bis(4,6-di-fluorophenyl)-pyridinate-N,C2′)picolinate iridiumcomplex) was used. For the hole blocking layer,BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) was used; for theelectron transport layer, Alq₃ was used.

Between the organic layer and the negative electrode film, an electroninjection layer using LiF was formed. The total film thickness of theorganic layer and the electron injection layer was 145 nm. For thenegative electrode film, Al having a film thickness of 100 nm was used.

When the organic EL light emitting device of the present Example wasilluminated using a driving current of 25 A/m² at a constant current,the driving voltage was 4.7 V, and the luminance was 920 cd/m². For thein-plane luminance unevenness of the organic EL lighting panel, ninepoints in the plane was measured and calculated (difference between themaximum luminance and the minimum luminance)/maximum luminance. Theresult was 4%.

The organic EL light emitting device was continuously illuminated at theabove-mentioned current density, to generate no fault such as shortcircuiting. The organic EL light emitting device was capable of beingilluminated stable after exceeding 10000 hours.

The present invention is not limited to the above-mentioned Embodiments,and a variety of Embodiments are possible within the scope of thepresent invention.

Although, in each of the above-mentioned Embodiments, constitutionshaving an auxiliary electrode was explained by way of example, thepresent invention is not limited thereto. It is also possible that theauxiliary electrode is not formed, and the shape of the auxiliaryelectrode is not limited to gridlike fashion.

It is possible that a part or the whole of the above-mentionedEmbodiment is as described in the following appendices, but not limitedthereto.

Appendix 1

An organic EL light emitting device comprising

-   -   a transparent substrate,    -   a transparent electrode film formed on the substrate,    -   a positive electrode contact portion that is electrically        connected to the transparent electrode film as a part of the        transparent electrode film,    -   an insulating layer formed on the transparent electrode film        such that a light emitting portion is opened,    -   an organic light emitting layer formed on the transparent        electrode film and on the insulating layer,    -   a negative electrode layer formed on the organic light emitting        layer,    -   a negative electrode contact portion that is in contact with at        least part of the negative electrode layer and that is        electrically connected to the negative electrode layer, and    -   a protective layer that, in order to separate and electrically        insulate the transparent electrode film and the positive        electrode contact portion from the negative electrode contact        portion, is formed therebetween, wherein    -   the positive electrode contact portion and the negative        electrode contact portion are electrically insulated by the        insulating layer or the protective layer; and    -   the transparent electrode film is formed without a gap across an        area on the substrate including areas where the positive        electrode contact portion, the insulating layer, the organic        light emitting layer, the negative electrode layer, the negative        electrode contact portion and the protective layer are formed.

Appendix 2

The organic EL light emitting device according to Appendix 1, whereinthe positive electrode contact portion and the negative electrodecontact portion are formed such that the heights thereof from thesubstrate are different from each other.

Appendix 3

The organic EL light emitting device according to Appendix 1 or 2,comprising

-   -   an auxiliary electrode formed on the transparent electrode film,        and    -   an insulating layer formed on the auxiliary electrode.

Appendix 4

The organic EL light emitting device according to any one of Appendices1 to 3, wherein the transparent electrode film is uniformly formed onthe substrate without patterning.

Appendix 5

A manufacturing method of an organic EL light emitting device comprising

-   -   forming a transparent electrode film on a transparent substrate,    -   forming a positive electrode contact portion that is        electrically connected to the transparent electrode film as a        part of the transparent electrode film,    -   forming a negative electrode contact portion on a part of upper        side of the transparent electrode film such that the negative        electrode contact portion is separated from the transparent        electrode film and the positive electrode contact portion,    -   forming an insulating layer on the transparent electrode film        such that a light emitting portion is opened,    -   forming an organic light emitting layer on the transparent        electrode film and on the insulating layer, and    -   forming a negative electrode layer that is electrically        connected to the negative electrode contact portion on the        organic light emitting layer such that the negative electrode        layer is separated from the transparent electrode film and the        positive electrode contact portion, and further comprising    -   before the forming a negative electrode contact portion,    -   forming a protective layer for electrically insulating the        transparent electrode film and the positive electrode contact        portion from the negative electrode contact portion between the        transparent electrode film and the positive electrode contact        portion, and the negative electrode contact portion.

Appendix 6

The manufacturing method of an organic EL light emitting deviceaccording to Appendix 5, comprising

-   -   before the forming a positive electrode contact portion,    -   forming the protective layer on the transparent electrode film,        wherein    -   the negative electrode contact portion is formed on the        protective layer.

Appendix 7

The manufacturing method of an organic EL light emitting deviceaccording to Appendix 5 or 6, wherein, in the forming a negativeelectrode contact portion, the negative electrode contact portion isformed at a height different from the height where the positiveelectrode contact portion is formed from the substrate.

Appendix 8

The manufacturing method of an organic EL light emitting deviceaccording to any one of Appendices 5 to 7, comprising

-   -   forming an auxiliary electrode on the transparent electrode        film, and    -   forming the insulating layer on the auxiliary electrode.

Appendix 9

The manufacturing method of an organic EL light emitting deviceaccording to Appendix 8, wherein the forming an auxiliary electrode andthe forming a positive electrode contact portion are performed at thesame time.

Appendix 10

The manufacturing method of an organic EL light emitting deviceaccording to any one of Appendices 5 to 9, wherein, in the forming atransparent electrode film, the transparent electrode film is formeduniformly on the substrate without patterning.

Appendix 11

An organic EL illumination device comprising the organic EL lightemitting device according to any one of Appendices 1 to 4.

Appendix 12

An organic EL illumination device comprising an organic EL lightemitting device manufactured by the manufacturing method of an organicEL light emitting device according to Appendices 5 to 10.

This application claims priority from Japanese Patent Application No.2011-073273, filed on May 29, 2011 in Japan. DESCRIPTION, CLAIMS, andDRAWINGS of Japanese Patent Application No. 2011-073273 are herebyincorporated by reference.

INDUSTRIAL APPLICABILITY

The present invention is applicable to an organic EL light emittingdevice, a manufacturing method of an organic EL light emitting deviceand an organic EL illumination device.

REFERENCE SIGNS LIST

-   1 Substrate-   2, 21 Transparent electrode film (positive electrode film)-   3, 31 Protective layer-   4 Positive electrode contact portion (positive electrode contact and    power supplying portion)-   5 Negative electrode contact portion (negative electrode contact and    power supplying portion)-   6 Auxiliary electrode-   7 Insulator layer-   8 Organic light emitting layer-   9 Negative electrode film-   41 Positive electrode contact hole portion (positive electrode    contact hole and positive electrode takeoff portion)-   51 Negative electrode takeoff portion (negative electrode contact    and negative electrode takeoff portion)-   100, 101, 102, 103, 104 Organic EL light emitting device

1. An organic EL light emitting device comprising: a transparentsubstrate; a transparent electrode film formed on the substrate; apositive electrode contact portion that is electrically connected to thetransparent electrode film as a part of the transparent electrode film;an insulating layer formed on the transparent electrode film such that alight emitting portion is opened; an organic light emitting layer formedon the transparent electrode film and on the insulating layer; anegative electrode layer formed on the organic light emitting layer; anegative electrode contact portion that is in contact with at least partof the negative electrode layer and that is electrically connected tothe negative electrode layer; and a protective layer that, in order toseparate and electrically insulate the transparent electrode film andthe positive electrode contact portion from the negative electrodecontact portion, is formed therebetween, wherein the positive electrodecontact portion and the negative electrode contact portion areelectrically insulated by the insulating layer or the protective layer;and the transparent electrode film is formed without a gap across anarea on the substrate including areas where the positive electrodecontact portion, the insulating layer, the organic light emitting layer,the negative electrode layer, the negative electrode contact portion andthe protective layer are formed.
 2. The organic EL light emitting deviceaccording to claim 1, wherein the positive electrode contact portion andthe negative electrode contact portion are formed such that the heightsthereof from the substrate are different from each other.
 3. The organicEL light emitting device according to claim 1, comprising: an auxiliaryelectrode formed on the transparent electrode film; and an insulatinglayer formed on the auxiliary electrode.
 4. The organic EL lightemitting device according to claim 1, wherein the transparent electrodefilm is uniformly formed on the substrate without patterning.
 5. Amanufacturing method of an organic EL light emitting device comprising:forming a transparent electrode film on a transparent substrate; forminga positive electrode contact portion that is electrically connected tothe transparent electrode film as a part of the transparent electrodefilm; forming a negative electrode contact portion on a part of upperside of the transparent electrode film such that the negative electrodecontact portion is separated from the transparent electrode film and thepositive electrode contact portion; forming an insulating layer on thetransparent electrode film such that a light emitting portion is opened;forming an organic light emitting layer on the transparent electrodefilm and on the insulating layer; and forming a negative electrode layerthat is electrically connected to the negative electrode contact portionon the organic light emitting layer such that the negative electrodelayer is separated from the transparent electrode film and the positiveelectrode contact portion, and further comprising: before the forming anegative electrode contact portion, forming a protective layer forelectrically insulating the transparent electrode film and the positiveelectrode contact portion from the negative electrode contact portionbetween the transparent electrode film and the positive electrodecontact portion, and the negative electrode contact portion.
 6. Themanufacturing method of an organic EL light emitting device according toclaim 5, comprising: before the forming a positive electrode contactportion, forming the protective layer on the transparent electrode film,wherein the negative electrode contact portion is formed on theprotective layer.
 7. The manufacturing method of an organic EL lightemitting device according to claim 5, wherein, in the forming a negativeelectrode contact portion, the negative electrode contact portion isformed at a height different from the height where the positiveelectrode contact portion is formed from the substrate.
 8. Themanufacturing method of an organic EL light emitting device according toclaim 5, comprising: forming an auxiliary electrode on the transparentelectrode film; and forming the insulating layer on the auxiliaryelectrode.
 9. The manufacturing method of an organic EL light emittingdevice according to claim 8, wherein the forming an auxiliary electrodeand the forming a positive electrode contact portion are performed atthe same time.
 10. The manufacturing method of an organic EL lightemitting device according to claim 5, wherein, in the forming atransparent electrode film, the transparent electrode film is formeduniformly on the substrate without patterning. 11-12. (canceled)